Photeresist Removal and Related Topics

Tuesday, October 29, 2013: 16:00-18:10
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Srini Raghavan and Richard E. Novak
16:00
All Wet Resist Strip for Improved Semiconductor Process and Product Improvement
Murli Bashyam, Texas Instruments Inc.; M. Satterfield, Texas Instruments Inc.; R. Gupta, Texas Instruments Inc.
16:20
Translation of Particles to Wafers during Spin Coating
C. W. Extrand, Entegris; Sung In Moon, Entegris; Loxie Monson, Entegris
16:40
Cryogenic Single-Component Micro-Nano Solid Nitrogen Particle Production Using Laval Nozzle for Physical Resist Removal-Cleaning Process
Jun Ishimoto, Ph.D, Institute of Fluid Science, Tohoku University; U Oh, MS, Hitachi, Ltd.; Tomoki Koike, Graduate School of Engineering, Tohoku University; Naoya Ochiai, Ph.D, Institute of Fluid Science, Tohoku University
17:00
Effects of Plasma and Wet Processes on Si-Rich Anti-Reflective Coating to Address Selective Trilayer Rework for Sub-20nm Technology Nodes
Olivier Pollet, CEA-LETI; Romain Sommer, CEA-LETI; Laurent Lachal, CEA-LETI; Sebastien Barnola, CEA-LETI; Come De Buttet, CEA-LETI; Claire Richard, ST Microelectronics; Cecile Jenny, ST Microelectronics
17:20
Characterization of the Descum Process for Various Silicon Substrates Doping
Chandra S Tiwari, Micron Technology Inc.; Yong Sheng Lim, Micron Technology Inc.; Ralph Fulton, Micron Technology Inc.; Jay Srinivasan, Micron Technology Inc.; Matt Gisinger, Micron Technology Inc.; Patrick Flynn, Micron Technology Inc.; Lai Ho Mak, Micron Technology Inc.
17:40
TiN Metal Hard Mask Removal with Selectivity to Tungsten and TiN Liner
Steven Lippy, Advanced Technology Materials Inc.; Li-Min Chen, Advanced Technology Materials Inc.; Brown Peethala, IBM Albany; David L Rath, IBM Thomas J Watson Research Center; Karl Boggs, Advanced Technology Materials Inc.; Muthumanickam Sankarapandian, IBM Albany; Evelyn Kennedy, Advanced Technology Materials Inc.
18:00
Concluding Remarks