225th ECS Meeting (May 11-15, 2014)

May 11 - 15, 2014

G. Wang (Institute of Microelectronics of Chinese Academy of Sciences), Y. Tianchun, J. Luo (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), C. Qin, Y. Xu (Institute of Microelectronics of Chinese Academy of Sciences), T. Chen, Q. Xu, P. Hong, T. Yang, C. Li, G. Xu, J. Yu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), H. Yin, J. Li, J. Yan (Institute of Microelectronics of Chinese Academy of Sciences), H. Zhu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences), C. Zhao (Institute of Microelectronics of Chinese Academy of Sciences), and H. H. Radamson (KTH Royal Institute of Technology)

H. Yildirim (Purdue University) and A. Kara (University Of Central Florida)

T. Rojas, J. Matos, and A. Kara (University Of Central Florida)

D. R. Kauffman, D. Alfonso, C. Matranga (United States Department of Energy; National Energy Technology Laboratory), R. Siva (URS), H. Qian, and R. Jin (Carnegie Mellon University; Department of Chemistry)

N. V. Nguyen (Physical Measurement Laboratory, NIST, Gaithersburg, MD, 20899) and W. Li (Key Laboratory for Physics and Chemistry of Nanodevices and department of Electronics, Peking University, Beijing, 100871, China)

P. Hong, Z. Zhao, C. Li, L. Meng, X. He (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), J. Han (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences), Y. Lu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), W. Xiong (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences), Y. Zhang, H. Yin (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), H. Zhu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences), J. Li, J. Yan, and C. Zhao (Institute of Microelectronics of Chinese Academy of Sciences)

R. G. Mertens (Morehead State University), V. H. Velez, and K. B. Sundaram (University of Central Florida)

J. B. Kang (Brentwood High School, Brentwood, TN 37027), S. Raina, S. H. Hsu, S. Akbulut, and M. Yilmaz (Vanderbilt University, Nashville, TN 37235)

G. Xu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), Q. Xu, H. Yin, G. Wang, J. Liu, W. Xiong, C. Li, D. Wang, J. Li, and C. Zhao (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences)

R. Callahan (National Renewable Energy Laboratory, University of Colorado - Boulder), R. Crisp (Colorado School of Mines, National Renewable Energy Laboratory), G. Rumbles (University of Colorado - Boulder, National Renewable Energy Laboratory), and J. Luther (National Renewable Energy Laboratory)