Power Switching Devices 3

Wednesday, October 14, 2015: 14:00-15:40
Ellis East (Hyatt Regency)
Srabanti Chowdhury and Balaji Raghothamachar
4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K
D. J. Spry (NASA Glenn Research Center), P. G. Neudeck (NASA Glenn Research Center), L. Chen (Ohio Aerospace Institute), C. W. Chang (Vantage Partners, LLC), D. Lukco (Vantage Partners, LLC), and G. M. Beheim (NASA Glenn Research Center)
(Invited) Characteristics of a Wire-Bonding-Less SiC Power Module Operating in a Wide Temperature Range
S. Sato (AIST, Sanken Electric Co., Ltd.), H. Tanisawa (AIST, Sanken Electric Co., Ltd.), T. Anzai (AIST, Calsonic Kansei Corp.), H. Takahashi (AIST, FUJI ELECTRIC CO., LTD.), Y. Murakami (AIST, NISSAN MOTOR CO., LTD.), F. Kato, K. Watanabe (AIST), and H. Sato (AIST)
Short-Circuit rRggedness of SiC JFETs
M. Berthou (Ampere Laboratory), S. Niu (Ampere Laboratory), D. Tournier (Laboratoire Ampère), and D. Planson (Laboratoire Ampère)
Concluding Remarks