Resistive Switching Dynamics

Tuesday, 3 October 2017: 14:00-17:40
Camellia 4 (Gaylord National Resort and Convention Center)
Chairs:
Mónica Burriel and Teresa Puig
14:30
(Invited) Fabrication and Characterization of Copper-Silica-Metal Resistive Switching Devices
W. Chen, A. Patadia, and M. N. Kozicki (Arizona State University)
15:00
Observation of Conductive Filament in CBRAM at Switching Moment
S. Muto, R. Yonesaka, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi (Hokkaido University)
15:20
Direct Evidence for the Role of Oxygen Vacancy Configuration for Oxide-Based Resistive Switching Devices
R. Schmitt, J. Spring, R. Korobko (Electrochemical Materials ETH Zurich), and J. L. M. Rupp (Electrochemical Materials ETH Zurich, Electrochemical Materials, MIT)
15:40
Break
16:30
(Invited) Is Ion Migration Needed for Resistance Memory and Memristor?
I. W. Chen (U Penn, Dept Materials Science & Engineering)
17:00
Two Stable Switching Modes with Opposite Polarity in Pt/TiO2/Ti Cells Based on Concurring Phenomena Close to the Pt/TiO2 Interface
S. Hoffmann-Eifert (PGI and JARA-Fit, Forschungszentrum Jülich GmbH, Germany), H. Zhang (Forschungszentrum Juelich GmbH), S. J. Yoo, C. S. Hwang (Seoul National University), C. La Torre (RWTH Aachen University), S. Menzel (Forschungszentrum Juelich GmbH), and D. Wouters (RWTH Aachen University)
17:20
In-Situ Electron Microscopy of Cu Movement in MoOx/Al2O3 Bilayer CBRAM during Cyclic Switching Process
R. Ishikawa, S. Hirata, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi (Hokkaido University), M. Kudo (Kyusyu University), and S. Matsumura (The Ultramicroscopy Research Center, Kyushu University)