GaN & SiC Characterization I

Wednesday, 4 October 2017: 13:30-15:10
Chesapeake B (Gaylord National Resort and Convention Center)
Chairs:
Roberta Nipoti and Lisa M. Porter
 
1343
(Invited) UVPL Imaging of 4H-SiC Wafers Along the Device Processing Chain (Cancelled)
14:00
1344
(Invited) Non-Destructive Three-Dimensional Imaging of Extended Defects in 4H-SiC
R. Tanuma, I. Kamata, and H. Tsuchida (Central Research Institute of Electric Power Industry)
14:30
1345
Classification of Killer and Non-Killer Silicon Carbide Epitaxial Defects and Accurate Prediction of Device Yield
H. Das, S. Sunkari, and H. Naas (ON Semiconductor)
14:50
1346
Estimation of Lattice Strain in 4H-SiC Commercial Wafer by Synchrotron Monochromatic X-ray Topographic Contour Mapping
J. Guo, Y. Yang, B. Raghothamachar, and M. Dudley (Stony Brook University)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 7
See more of: Electronic and Photonic Devices and Systems
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