2D Materials and Devices

Tuesday, 2 October 2018: 08:30-11:50
Universal 7 (Expo Center)
Chairs:
Lincoln J Lauhon and Joan M. Redwing
08:30
703
(Invited) 2D Non-Volatile RF Switches
M. Kim and D. Akinwande (The University of Texas at Austin)
09:00
704
(Invited) Epitaxial Growth of 2D Transition Metal Dichalcogenide Monolayers, Alloys and Heterostructures
X. Zhang, M. Chubarov, T. Choudhury, and J. M. Redwing (The Pennsylvania State University)
09:30
Break
10:20
706
(Invited) Strain and Electromechanical Coupling at the Nanoscale in Atomically Thin Transition Metal Dichalcogenides
E. T. Yu, Z. Zhang, C. J. Brennan, A. C. De Palma, G. Cossio, and K. Koul (University of Texas at Austin)
10:50
707
Investigation on Tunable Optical Properties and Structures of Graphene Quantum Dots Doped with Sulfur Heteroatoms
J. Feng, H. Dong, B. Pang, L. Yu (Qingdao University of Science and Technology), and L. Dong (Hamline University, Qingdao University of Science and Technology)
11:10
708
Large Area Growth of MoS2 By Chemical Vapour Deposition
E. Coleman (Tyndall National Institute, University Cork, Cork), S. Monaghan (University College Cork), F. Gity (Tyndall National Institute), M. Schmidt (Tyndall National Institute, University College Cork), J. Connolly, J. Lin, L. Walsh (Tyndall National Institute), K. Cherkaoui (Tyndall National Institute, University College Cork), K. O'Neill, N. McEvoy, C. O' Coileain (CRANN, Trinity College Dublin), D. Buckley (University College Cork), C. O'Dwyer (School of Chemistry, University College Cork), P. K. Hurley (Tyndall National Institute), and G. S. Duesberg (Universität der Bundeswehr München)
11:30
709
Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide
A. V. Ravichandran, J. Lee, L. Cheng, A. T. Lucero, L. Colombo, C. D. Young (University of Texas at Dallas), A. Venugopal, A. Polley (Texas Instruments Incorporated), and J. Kim (University of Texas at Dallas)