Process Integration

Tuesday, 26 May 2015: 13:40-17:40
Conference Room 4M (Hilton Chicago)
F. Roozeboom and P. J. Timans
Ion Implantation Applications for Advanced Device Scaling
N. Variam and H. J. L. Gossmann (Applied Materials)
Heated Ion Implantation Technology for High Performance Metal-Gate/High-k CMOS SOI Finfets
W. Mizubayashi (National Institute of AIST), H. Onoda, Y. Nakashima (Nissin Ion Equipment Co., Ltd.), Y. Ishikawa, T. Matsukawa, K. Endo, Y. Liu, S. O'uchi, J. Tsukada, H. Yamauchi, S. Migita, Y. Morita, H. Ota, and M. Masahara (National Institute of AIST)
(Invited) Plasma Etching Technology Challenges for Future CMOS Fabrication Based on Microwave ECR Plasma
M. Izawa, M. Tanaka, N. Yasui (Hitachi High-Technologies Corp.), and M. Morimoto (Hitachi High-Technologies Taiwan Corporation)
Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition
A. Teramoto, Y. Nakao, T. Suwa, K. Hashimoto (Tohoku University), T. Motoya (Mitsubishi Electric Corporation), M. Hirayama, S. Sugawa, and T. Ohmi (Tohoku University)
Enhanced Equipment and New Processes As Enabler for Power Technologies on 300mm Substrates
M. Engelhardt, J. Baumgartl, G. Denifl, G. Ehrentraut, M. Kuenle, M. Stadtmueller, S. Werner (Infineon Technologies Austria AG), D. Crippa (LPE Milano), and M. Kraft (CTR Villach)
Influence of Annealing Condition on TSV Pumping and Microstructure Evolution
X. Jing (National Center for Advanced Packaging, Institute of Microelectronics Chinese Academy of Science), U. H. Lee (Memory Thin Film Technology Team, Samsung Electronics), C. Xu, Z. Niu, C. Song, W. Zhang (National Center for Advanced Packaging), J. Y. Bae, and J. Won (Memory Thin Film Technology Team, Samsung Electronics)