BEOL Material and Process Technology

Tuesday, 30 May 2017: 08:00-09:55
Churchill B2 (Hilton New Orleans Riverside)
Chairs:
Kuniyuki Kakushima and Stefan De Gendt
08:00
1260
Low Hydrogen Silicon Carbon Nitride Cap for High Performance Sub-10 nm Cu-Low k Interconnect
S. V. Nguyen, H. K. Shobha (IBM Research at Albany Nanotech), T. J. Haigh (IBM STR Research), Y. Yao (IBM Systems Group), L. Tai (IBM Semiconductor R&D Center), S. A. Cohen, T. M. Shaw, C. K. Hu, E. Liniger (IBM T.J. Watson Research Center), K. Virwani (IBM Research - Almaden), A. J. Kellock (IBM Almaden Research Center), and D. F. Canaperi (IBM Research)
08:20
1261
Modeling and Simulation of Cu Diffusion in Porous Low-k Dielectrics
R. Ali (Virginia Polytechnic Institute and State University), Y. Fan (Virginia Tech ECE Department), S. W. King (Intel Corporation), and M. K. Orlowski (ECE Department Virginia Tech)
08:40
1262
Study of Seed-Layer Stability on Copper Electrolytic Bath
E. Delbos (Institut Lavoisier de Versailles, KMG Ultra Pure Chemicals), I. Setoain, M. Frégnaux, A. M. Gonçalves, and A. Etcheberry (Institut Lavoisier de Versailles)
09:00
Break
09:15
1263
Investigation of Thermal Treatment Processes for Dissimilar Wafer Bonding
C. Wang, Y. Li, Y. Liu, Z. Yuan, Y. Tian, C. Wang (Harbin Institute of Technology), and T. Suga (School of Engineering, Univ. Tokyo)
09:35
1264
Incorporation of the Organic Additives during the Damascene or TSV Process: Influence of the Applied Waveform
E. Delbos (Institut Lavoisier de Versailles, KMG Ultra Pure Chemicals), F. Jomard (GEMAC), M. Bouttemy, and A. Etcheberry (Institut Lavoisier de Versailles)
See more of: G02: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7
See more of: Electronic Materials and Processing
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