High Performance Device and Heterogeneous Integration 1

Wednesday, 4 October 2017: 08:00-10:30
Chesapeake C (Gaylord National Resort and Convention Center)
Chairs:
Kangguo Cheng and Patrick Chin
08:00
1141
(Invited) FinFET Technology
K. Cheng (IBM)
08:30
1142
(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials
S. Takagi, D. H. Ahn, M. Noguchi, S. Yoon, T. Gotow, K. Nishi, M. Kim, T. E. Bae, T. Katoh, R. Matsumura, R. Takaguchi, and M. Takenaka (The University of Tokyo)
09:00
1143
The Impact of Tunnel FET on Heavy Ion Induced Transient Effect
Y. Wu and Y. Takahashi (Nihon University)
09:20
1144
(Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)
A. Gutierrez-Aitken (Northrop Grumman Aerospace Systems), D. Scott (Norhtrop Grumman Aerospace Systems), K. Sato, B. Poust, E. Nakamura, K. Thai, W. Chan, E. Kaneshiro, C. Monier, I. Smorchkova, N. Lin, D. Ferizovic, X. Zeng, A. Oki, and R. Kagiwada (Northrop Grumman Aerospace Systems)
09:50
1145
(Invited) SiGe BiCMOS Heterogeneous Integration Using Wafer Bonding Technologies
M. Wietstruck, M. Kaynak (IHP – Leibniz-Institut für innovative Mikroelektronik), and A. Mai (IHP-Leibniz-Institut für innovative Mikroelektronik)
10:20
Break
See more of: G03: Semiconductor Process Integration 10
See more of: Electronic Materials and Processing
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