High Performance Device and Heterogeneous Integration 1

Wednesday, 4 October 2017: 08:00-10:30
Chesapeake C (Gaylord National Resort and Convention Center)
Chairs:
Kangguo Cheng and Patrick Chin
08:00
08:30
(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials
S. Takagi, D. H. Ahn, M. Noguchi, S. Yoon, T. Gotow, K. Nishi, M. Kim, T. E. Bae, T. Katoh, R. Matsumura, R. Takaguchi, and M. Takenaka (The University of Tokyo)
09:00
The Impact of Tunnel FET on Heavy Ion Induced Transient Effect
Y. Wu and Y. Takahashi (Nihon University)
09:20
(Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)
A. Gutierrez-Aitken (Northrop Grumman Aerospace Systems), D. Scott (Norhtrop Grumman Aerospace Systems), K. Sato, B. Poust, E. Nakamura, K. Thai, W. Chan, E. Kaneshiro, C. Monier, I. Smorchkova, N. Lin, D. Ferizovic, X. Zeng, A. Oki, and R. Kagiwada (Northrop Grumman Aerospace Systems)
10:20
Break