Advanced Processes for FEOL/BEOL Applications

Monday, May 12, 2014: 10:00-12:20
Flagler, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Kuniyuki Kakushima and Vijay Narayanan
10:00
1439
(Invited) Spatial ALD, Deposition of Al2O3 Films at Throughputs Exceeding 3000 Wafers per Hour
E. H. A. Granneman, V. I. Kuznetsov, and P. Vermont (Levitech BV)
10:40
1440
Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects
S. V. Nguyen, D. Priyadarshini, H. K. Shobha, T. J. Haigh (IBM at Albany Nanotech), C. K. Hu, S. A. Cohen, E. Liniger, T. M. Shaw (IBM T.J. Watson Research Center), E. D. Adams, J. Burnham (IBM Essex Junction), A. Madan, N. R. Klymko (IBM Semiconductor R&D Center), C. Parks, D. Yang, S. E. Molis (IBM Semiconductor Research and Development Center), Y. Lin (IBM at Albany Nanotech), G. Bonilla, A. Grill, D. Edelstein (IBM T.J. Watson Research Center), D. F. Canaperi (IBM at Albany Nanotech), L. Q. Xia, S. Reiter, M. Balseanu, and M. Y. Shek (Applied Materials)
11:00
1441
High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET
Y. Nakao (Tohoku University), T. Matsuo (Tohoku University, ZEON CORPORATION), A. Teramoto, H. Utsumi, K. Hashimoto, R. Kuroda, Y. Shirai, S. Sugawa, and T. Ohmi (Tohoku University)
11:20
1442
Wafer Scale Cu Plating Process Optimization for Defectivity Improvement
S. Ahmed (IBM Semiconductor Research & Development Center), Q. Huang (IBM, T. J. Watson Research Center), T. Cheng (IBM Semiconductor Research & Development Center), P. Findeis (IBM Microelectronics Division), C. R. Gruszecki, A. H. Simon, P. S. Mclaughlin, N. Lustig, E. Engbrecht, M. N. Lakritz, P. I. Wang, C. L. Montgomery, S. Mittal, F. H. Baumann, C. N. Truong (IBM Semiconductor Research & Development Center), B. C. Baker-O'neal (IBM, T. J. Watson Research Center), S. L. Grunow, M. P. Chudzik, and S. Grunow (IBM Semiconductor Research & Development Center)
11:40
1443
Atomic Layer Deposition of Sidewall Spacers: Process, Equipment and Integration Challenges in State-of-the-Art Logic Technologies
M. P. Belyansky, R. Conti, S. Khan, X. Zhou, N. R. Klymko, Y. Yao, A. Madan, L. Tai, P. Flaitz (IBM Semiconductor R&D Center), and T. Ando (IBM T. J. Watson Research Center)
12:00
1444
Surface Selective Atomic Layer Deposition of Hafnium Oxide for Copper Diffusion Barrier Application Using Tetrakis(diethylamino)Hafnium and Ethanol
S. K. Selvaraj, J. I. Rossero (Department of Chemical Engineering, University of Illinois at Chicago), and C. G. Takoudis (Department of Bioengineering, University of Illinois at Chicago, Department of Chemical Engineering, University of Illinois at Chicago)
See more of: P2: Silicon Compatible Materials, Processes and Technologies for Advanced Integrated Circuits and Emerging Applications 4
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