Copper Damascene Interconnections
Tuesday, October 29, 2013: 14:20-18:00
Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
S. Mathad
and
Shoso Shingubara
14:20
Effect of Bath Chemistry On Electrodeposited Cu Morphology Using Thin PVD Cu Seed
James Kelly, IBM Research;
Xuan Lin, Globalfoundries;
Takeshi Nogami, IBM Research;
O. van der Straten, IBM Research;
James Demarest, IBM Microelectronics;
Juntao Li, IBM Microelectronics;
Richard Murphy, IBM Microelectronics;
Patrick DeHaven, IBM Microelectronics;
Xunyuan Zhang, Globalfoundries;
Christopher Penny, IBM Microelectronics;
Q. Huang, IBM, T. J. Watson Research Center;
Daniel Edelstein, IBM Research
15:20
Structural Features of Nano-Scale Damascene Copper Lines After Annealing in Wide Temperature Range
Tatyana Konkova, Ph.D., Department of Materials Science and Engineering, Ibaraki University;
Sergey Mironov, Ph.D., Department of Materials Processing, Graduate School of Engineering, Tohoku University;
Yiqing Ke, Ph.D., Graduate School of Science and Engineering, Ibaraki University;
Jin Onuki, Ph.D., Professor, Department of Materials Science and Engineering, Ibaraki University
16:20
Investigation of Bomb Defects: Reducing the Defect From Perhydropolysilazane Layer On Semiconductor
Chae Jung Lee, a Master's degree, Samsung Electronics;
Yun Ho Kim, a doctoral degree, Samsung Electronics;
Jin Sung Kim, a doctoral degree, Samsung Electronics;
Jung sook OH, bachelor's degree, samsung electronics;
Byoung Deog Choi, doctoral degree, Sungkyunkwan University
17:20
Triangular Voltage Sweep Measurements After Current-Ramp Temperature Stress
Ivan Ciofi, PhD, Imec;
Pietro Lazzaro, M.Eng., Imec;
Salvatore Silipigni, M.Eng., Imec;
Yohan Barbarin, PhD, Imec;
Kristof Croes, PhD, Imec
