Copper Electrodeposition Fundamentals
Wednesday, October 30, 2013: 08:40-12:00
Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
Masanori Hayase, Doctor of Engineering
and
Wei-Ping Dow
08:40
Analysis of Cu(I) Complexes in Copper Sulfate Electroplating Solution By Using Reaction Kinetics With a Chelate Reagent
Hiroaki Noma, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST);
Toshiaki Koga, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST);
Chieko Hirakawa, B.A., National Institute of Advanced Industrial Science and Technology (AIST);
Kazuhiro Nonaka, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST);
Kazuhisa Shobu, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST)
10:40
Diallylamine Levelers Side Chains Effect On Copper Via Filling
Yasutaka Yamada, Master, Osaka Prefecture University;
Kazuo Kondo, Ph.D., Osaka Prefecture University;
Minoru Takeuchi, B.S., Nittobo Medical;
Takeyasu Saito, Ph.D., Osaka Prefecture University;
Naoki Okamoto, D.Eng., Osaka Prefecture University;
Masaru Bunya, Nittobo Medical;
Masayuki Yokoi, Osaka Prefecture University
11:00
In-Situ Analysis of Peg Surface Adhesion On Cu
Ui-Hyoung Lee, Ph.D., Samsung Electronics, Thin Film Technology Team;
Jinho Choi, Undergraduate, Samsung Electronics, Thin Film Technology Team;
Jaihyung Won, Ph.D., Samsung Electronics, Thin Film Technology Team;
Hyo-Jong Lee, Ph.D., Dong-A University;
Hun-Joon Sohn, Ph.D., Seoul National University;
Tak Kang, Ph.D., Seoul National University
